Contact recording tunnel magnetoresistive sensor with layer of refractory metal
作者： Robert G. Biskeborn , Calvin S. Lo
DOI:
关键词:
摘要: Various embodiments relate to an apparatus having a sensor with active tunnel magnetoresistive region, magnetic shields flanking the and gaps between region shields. The includes free layer, barrier layer reference layer. At least one of electrically conductive refractory material. Other modified at media facing side thereof, being nonconductive mechanically hardened.
lens.org 参考文章(26)
Tsann Lin, Zheng Gao, Liubo Hong, Honglin Zhu, Tmr reader structure and process for fabrication ,(2010)
Brian R. York, Wen-yaung Lee, Dulip Ajantha Welipitiya, Thomas E. Shatz, GMR sensor having an under-layer treated with nitrogen for increased magnetoresistance ,(2007)
Min Li, Hui-Chuan Wang, Tong Zhao, Kunliang Zhang, TMR Device with Low Magnetostriction Free Layer ,(2015)
John Lee Brooks, William James Schoen, Jimmy Paul Strickland, Walter James Kincaid, Laura Margaret Bostian, Read/write data sharing of DASD data, including byte file system data, in a cluster of multiple data processing systems ,(1999)
Kangho Lee, Seung H. Kang, David Bang, One-Mask MTJ Integration for STT MRAM ,(2009)
Yoshiaki Saito, Minoru Amano, Tunnel magnetoresistance effect device, and a portable personal device ,(2008)
Tsann Lin, Daniele Mauri, In-situ oxidized films for use as gap layers for a spin-valve sensor and methods of manufacture ,(2002)
Ching H. Tsang, Robert E. Fontana, Kuok San Ho, Jeffrey R. Childress, Tunnel valve flux guide structure formed by oxidation of pinned layer ,(2001)
Jila Tabib, Daniele Mauri, Robert S. Beach, David J. Seagle, Electrical lapping guides made from tunneling magnetoresistive (TMR) material ,(2006)
Hui Chuan Wang, Min Li, Kunliang Zhang, Tong Zhao, TMR Device with Novel Free Layer Structure ,(2015)