Mtj mram with stud patterning

作者: Dong Ha Jung , Yuchen Zhou , Kimihiro Satoh , Yiming Huai , Jing Zhang

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摘要: Use of a multilayer etching mask that includes stud and removable spacer sleeve for MTJ to form bottom electrode is wider than the rest pillar described. The first embodiment invention described top mask. In second third embodiments conductive material also serves as electrode. after formed around it initially increase masking width phase etching. removed further etching, create step structures are progressively transferred down into layers forming pillar. one by net polymer deposition during an phase.

参考文章(8)
Wei Cao, Cheng Horng, Chen-Jung Chien, Chyu-Jiuh Torng, Ruying Tong, Liubo Hong, Bottom conductor for integrated MRAM ,(2005)
Hee-Ju Shin, Jang-eun Lee, Jun-Ho Jeong, Woo-Jin Kim, Yong-Hwan Ryu, Methods of forming pattern structures ,(2011)
Witold Kula, Guangli Liu, Robert Beach, Tai Min, Ru-Ying Tong, Cheng T. Horng, Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application ,(2009)
Xiaochun Zhu, Seung H. Kang, Xia Li, Magnetic tunnel junction device and fabrication ,(2010)
Brian R. Butcher, Kenneth H. Smith, Kerry J. Nagel, Top contact alignment in semiconductor devices ,(2007)
Seung Hyuk Kang, Xia Li, Matthew Michael Nowak, Mtj structure and integration scheme ,(2011)