Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application

摘要: A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation and containing an oxygen surfactant layer to form more uniform lower breakdown distribution percent. CoFeB/NCC/CoFeB composite free middle nanocurrent channel minimizes Jc0 while enabling thermal stability, write voltage, read Hc values that satisfy 64 Mb design requirements. The NCC has RM grains in insulator matrix where R Co, Fe, or Ni, M metal such as Si Al. thickness maintained around the minimum grain size avoid granules not having sufficient diameter bridge distance between upper CoFeB layers. second third may be included inserted below Ru capping layer.