High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same
作者： Witold Kula , Chyu-Jiuh Torng , Ru-Ying Tong , Cheng T. Horng
DOI:
关键词: Materials science 、 Layer (electronics) 、 Speed measurement 、 Electrical engineering 、 Magnetization 、 One half 、 Damping constant 、 Optoelectronics 、 Magnetoresistive random-access memory 、 Amorphous solid 、 Stack (abstract data type)
摘要: A STT-RAM MTJ that minimizes spin-transfer magnetization switching current is disclosed. The has a MgO tunnel barrier layer formed with natural oxidation process to achieve low RA and Fe or Fe/CoFeB/Fe free which provides lower intrinsic damping constant than CoFeB layer. Fe, FeB, when AP1 pinned in MRAM stack annealed at 360°C high dR/R (TMR) > 100% substantial improvement read margin TMR/Rp_cov = 20. High speed measurement of 100 nm x 200 oval MTJs shown Jc0 for one half an amorphous Co40Fe40B20
google.de 参考文章(23)
Cheng T. Horng, Ru-Ying Tong, Magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching current ,(2009)
Yu-Hsia Chen, Liubo Hong, Ru-Ying Tong, Cheng T. Horng, A method of forming a magnetic tunneling junction (mtj) mram device and a tunneling magnetoresistive (tmr) read head ,(2004)
Ru-Ying Tong, Cheng T. Horng, Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same ,(2009)
Yu-Hsia Chen, Hui-Chuan Wang, Tong Zhao, Kunliang Zhang, Min Li, Magnetoresistive spin valve sensor with tri-layer free layer ,(2005)
Min Li, Yu-Hsia Chen, Tong Zhao, Hui Chuan Wang, Kunliang Zhang, Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier ,(2010)
Stuart Stephen Papworth Parkin, MgO-based tunnel spin injectors ,(2004)
Yiming Huai, Frank Albert, Paul P. Nguyen, Three-terminal magnetostatically coupled spin transfer-based MRAM cell ,(2003)
Mikihiko Oogane, Takeshi Wakitani, Satoshi Yakata, Resul Yilgin, Yasuo Ando, Akimasa Sakuma, Terunobu Miyazaki, Magnetic Damping in Ferromagnetic Thin Films Japanese Journal of Applied Physics. ,vol. 45, pp. 3889- 3891 ,(2006) , 10.1143/JJAP.45.3889
Jun Hayakawa, Shoji Ikeda, Young Min Lee, Ryutaro Sasaki, Toshiyasu Meguro, Fumihiro Matsukura, Hiromasa Takahashi, Hideo Ohno, Current-Driven Magnetization Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions Japanese Journal of Applied Physics. ,vol. 44, pp. L1267- L1270 ,(2005) , 10.1143/JJAP.44.L1267
S. Tehrani, J.M. Slaughter, E. Chen, M. Durlam, J. Shi, M. DeHerren, Progress and outlook for MRAM technology ieee international magnetics conference. ,vol. 35, pp. 2814- 2819 ,(1999) , 10.1109/20.800991