Process to fabricate bottom electrode for MRAM device
作者： Chyu-Jinh Torng , Wei Cao , Cheng T. Horng , Terry Kin Ting Ko , Ru-Ying Tong
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摘要: Formation of a bottom electrode for an MTJ device on silicon nitride substrate is facilitated by including protective coating that partly consumed during etching the alpha tantalum portion said electrode. Adhesion to SiN enhanced using TaN/NiCr bilayer as “glue”.
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