Direct observation of minority carrier leakage in operating laser diodes by Kelvin probe force microscopy
作者： K. S. Ladutenko , A. V. Ankudinov , V. P. Evtikhiev
DOI: 10.1134/S1063785009060261
关键词: Volta potential 、 Materials science 、 Biasing 、 Laser 、 Leakage (electronics) 、 Kelvin probe force microscope 、 Optoelectronics 、 Optics 、 Laser diode 、 Diode 、 Semiconductor
摘要: A new approach to investigating the leakage of nonequilibrium holes and electrons from active region a semiconductor laser diode is proposed. According this, scanning Kelvin probe force microscopy used measure averaged local changes in contact potential difference on surface mirrors device operating at pulsed bias voltage. It shown that measured signal level determined by degree charge exchange between slow states minority carriers, concentration which directly related current.
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