Direct monitoring of thermally activated leakage current in AlGaInP laser diodes

摘要: Using specially prepared structures, we have observed emission from a layer of direct-gap “monitor” material placed between the p-contact and p-cladding conventional 670 nm GaInP laser diode at room temperature. This observation provides direct evidence for electron leakage through in these devices. Furthermore, although quantum well waveguide core both pin above threshold, indicating that Fermi levels clamp throughout active region, monitor continues to rise threshold. is characteristic drift component current, which confirmed by simulation carrier transport processes cladding with without drift.