High resolution mapping of strains and rotations using electron backscatter diffraction

摘要: AbstractThe angular resolution of electron backscatter diffraction (EBSD) measurements can be significantly improved using an analysis based on determination small shifts in features from one pattern to the next cross-correlation functions. Using shift at many regions pattern, errors best fit strain and rotation tensors reduced. The authors show that elements tensor misorientations measured ± 10−4 ±0·006° for rotations. We apply technique two quite different materials systems. First, we determine elastic distribution near interface a cross-sectioned SiGe epilayer, Si substrate semiconductor heterostructure. plane stress boundary conditions sample surface are used separate every term tensor. Second, applicability structural is illustrated by determining lattice curvature caused dislocations within plastic zone associated with wake ...