Loss of phosphorus due to segregation at Si∕SiO2 interfaces: Experiments and modeling

摘要: Phosphorus segregation at Si∕SiO2 interfaces was examined experimentally and by simulation, for phosphorus implanted doses of 2×1013 7×1013cm−2. Reversible loss observed during annealing due to interface segregation. Two stages dose recovery were in samples that The surface concentration remains almost constant with rapid the early stage annealing. rate declines decay after long-term Samples implantation 2×1013cm−2 exhibit only slow recovery. Slow low captured simulation based on a conventional trap model. An clustering model developed simulate an concentration. assumes reactions between atoms while considers ph...