Characteristics of n-Type Junctionless Poly-Si Thin-Film Transistors With an Ultrathin Channel
作者： Horng-Chih Lin , Cheng-I Lin , Tiao-Yuan Huang
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摘要: In this letter, we study the characteristics of n-type junctionless (JL) poly-Si thin-film transistors (TFTs) with an ultrathin and heavily phosphorous doped channel. The fabricated devices show excellent performance a subthreshold swing 240 mV/dec on/off current ratio >; 107. Moreover, JL device shows 23 times increase in on-state at gate overdrive 4 V as compared conventional control undoped significant improvement drive is ascribed to inherently high carrier concentration contained channel device. These results evidence great potential TFTs for manufacturing future 3-D flat-panel electronic products.
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