A novel junction-free BE-SONOS NAND flash

摘要: We have successfully demonstrated a novel junction-free BE-SONOS NAND Flash. Junction-free devices greatly improve the short channel effect and thus promise scaling of Flash below 20 nm node. Instead S/D junctions very small space (Lt 30 nm) is left between adjacent devices. Junction formed only at outer region array, while there no junction inside array. Fringe field from gate inverts Si under narrow allowing conduction without diffusion junction. Successful n-channel, p-channel TFT are using this technique. Simulation results suggest that technique scalable beyond Moreover, unaffected by thermal budget in 3D This new device can be implemented current process introducing masks.