A model for reactive ion etching of PZT thin films
作者： G. Suchaneck , R. Tews , G. Gerlach
DOI: 10.1016/S0257-8972(99)00101-2
关键词: Etching (microfabrication) 、 Reactive-ion etching 、 Electrode 、 Materials science 、 Electron density 、 Gas composition 、 Plasma modeling 、 Thin film 、 Electron 、 Molecular physics 、 Analytical chemistry
摘要: Abstract In this work, a simplified model for the discharge kinetics and surface chemistry of r.f. discharges containing CF 4 , CHF 3 Ar gas mixtures suitable lead zirconate–titanate (PZT) etch rate simulation is presented. The electron density fraction power dissipation in bulk, sheaths due to oscillating sheath boundaries were calculated by an given etching parameters. A Maxwellian energy distribution was assumed. For parallel plate reactor with plug flow electrode surface, ion flux determining PZT calculated. dissipated bombardment about 80%. weak dependence on composition obtained.
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sci-hub.se 参考文章(30)
Bernhard Schrader, Raman/infrared atlas of organic compounds ,(1989)
Suresh P. Venkatesan, Isaac Trachtenberg, Thomas F. Edgar, Modeling of Silicon Etching in CF 4 / O 2 and CF 4 / H 2 Plasmas Journal of The Electrochemical Society. ,vol. 137, pp. 2280- 2290 ,(1990) , 10.1149/1.2086928
David Edelson, Daniel L. Flamm, Computer simulation of a CF4 plasma etching silicon Journal of Applied Physics. ,vol. 56, pp. 1522- 1531 ,(1984) , 10.1063/1.334108
R N Franklin, P G Daniels, J Snell, Characteristics of electric discharges in the halogens: the recombination-dominated positive column Journal of Physics D. ,vol. 26, pp. 1638- 1649 ,(1993) , 10.1088/0022-3727/26/10/015
P. W. Harland, J. L. Franklin, Partitioning of excess energy in dissociative resonance capture processes Journal of Chemical Physics. ,vol. 61, pp. 1621- 1636 ,(1974) , 10.1063/1.1682155
S. R. Hunter, L. G. Christophorou, Electron attachment to the perfluoroalkanes n‐CNF2N+2 (N=1–6) using high pressure swarm techniques Journal of Chemical Physics. ,vol. 80, pp. 6150- 6164 ,(1984) , 10.1063/1.446716
H. Macé, H. Achard, L. Peccoud, Reactive ion etching of Pt/PZT/Pt ferroelectric thin film capacitors in high density DECR plasma Microelectronic Engineering. ,vol. 29, pp. 45- 48 ,(1995) , 10.1016/0167-9317(95)00113-1
T. E. Sharp, J. T. Dowell, Isotope Effects in Dissociative Attachment of Electrons in Methane The Journal of Chemical Physics. ,vol. 46, pp. 1530- 1531 ,(1967) , 10.1063/1.1840885
M.R. Bruce, Ce Ma, R.A. Bonham, Positive ion pair production by electron impact dissociative ionization of CF4 Chemical Physics Letters. ,vol. 190, pp. 285- 290 ,(1992) , 10.1016/0009-2614(92)85340-G
S. P. Slinker, R. D. Taylor, A. W. Ali, Electron energy deposition in atomic oxygen Journal of Applied Physics. ,vol. 63, pp. 1- 10 ,(1986) , 10.1063/1.340491