Modeling of Silicon Etching in CF 4 / O 2 and CF 4 / H 2 Plasmas

摘要: A one-dimensional radial flow reactor model that includes fairly detailed free radical gas-phase chemistry has been developed for the etching of silicon in CF{sub 4}/O{sub 2} and 4}/H{sub plasmas. Attention restricted to transport reaction neutral species. The equations were solved by orthogonal collocation. sensitivities predictions rate, inlet gas composition, electron density, loading, other factors have examined. major loss path fluorine atoms is different systems, this results significant qualitative differences parametric two systems.