Modeling the plasma chemistry of C2F6 and CHF3 etching of silicon dioxide, with comparisons to etch rate and diagnostic data

摘要: A detailed chemical reaction mechanism is reported that describes the C2F6 and CHF3 plasma etching of silicon dioxide, which widely used in fabrication microelectronic devices. The gas-phase part involves 28 species 132 reactions, while surface 2 materials, 6 species, 85 reactions. Rate parameters are generally taken from independent studies literature, or estimated rates measured for related species. Zero-dimensional simulations using these mechanisms compare well with a large body etch rate diagnostic measurements three different high-density reactors. include electron negative ion absolute densities, CF, CF2, SiF gas temperatures, current densities. An analysis dominant paths shows importance impact reactions need to etch-product On surface, dominated...