GATE CUT METHOD FOR REPLACEMENT METAL GATE
作者： Park Chanro , Economikos Laertis , Sung Min Gyu , Xie Ruilong
DOI:
关键词: Trimming 、 Fin (extended surface) 、 Dielectric 、 Metal gate 、 Dielectric layer 、 Optoelectronics 、 Etching (microfabrication) 、 Materials science 、 Layer (electronics)
摘要: A method of manufacturing a FinFET structure involves forming gate cut within sacrificial layer and backfilling the opening with an etch selective dielectric later. Lateral etching after removing remaining portions can be used to increase distance between (isolation) adjacent fin relative methods that do not perform step trimming layer.
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