TSC transport peak in phenothiazine-doped anthracene crystals
作者： M Samoc , A Samoc , J Sworakowski , N Karl , None
DOI: 10.1088/0022-3719/16/1/019
关键词: Molecular physics 、 Electric field 、 Spectral line 、 Optoelectronics 、 Organic photoconductor 、 Phenothiazine 、 Dopant 、 Doping 、 Materials science 、 Charge carrier 、 Anthracene
摘要: Thermally stimulated current (TSC) spectra have been measured in crystals of the organic photoconductor anthracene containing various amounts phenothiazine, a dopant which forms relatively deep hole traps. In order to confirm theoretical predictions recently proposed TSC 'transport peak' model, electric field and thickness dependences studied. It is found that position peak due phenothiazine trap varies systematic way with applied field, allowing calculation parameters determination temperature dependence effective trap-controlled mobility holes. The traps formed by display narrow energy distribution charge carrier transport doped bears dispersive character.
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