Near-unity below-band-gap absorption by microstructured silicon
作者： C. Wu , C. H. Crouch , L. Zhao , J. E. Carey , R. Younkin
DOI: 10.1063/1.1358846
关键词: Photocurrent 、 Optoelectronics 、 Band gap 、 Silicon 、 Avalanche photodiode 、 Optics 、 Infrared 、 Materials science 、 Semiconductor 、 Photodiode 、 Absorptance
摘要: We increased the absorptance of light by silicon to approximately 90% from the near ultraviolet (0.25 μm) to the near infrared (2.5 μm) by surface microstructuring using laser-chemical …
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