Active Layer Thickness Effects on the On-State Current and Pulse Measurement at Room Temperature on Deposited Zinc Oxide Thin-Film Transistors
作者： Sarbani Basu , Pramod K. Singh , C. Ghanshyam , Pawan Kapur , Yeong-Her Wang
DOI: 10.1007/S11664-012-2132-4
关键词: Microelectronics 、 Optoelectronics 、 Layer (electronics) 、 Semiconductor 、 Transistor 、 Sputter deposition 、 Active layer 、 Threshold voltage 、 Fabrication 、 Materials science
摘要: This study reports on the fabrication of thin-film transistors (TFTs) with transparent zinc oxide (ZnO) semiconductors serving as active channel and silicon dioxide (SiO2) gate insulator. The ZnO films were deposited by radiofrequency magnetron sputtering at room temperature. Moreover, effects thickness structural pulse current–voltage characteristics TFTs using a bottom configuration investigated. As increased, crystalline quality conductance enhanced. electrical exhibited field-effect mobilities 8.36 cm2/Vs to 16.40 on-to-off current ratios 108 107 for layer 45 nm 70 nm, respectively. threshold voltage was in range 10 V 31 thicknesses from 35 low deposition processing temperatures make these suitable flexible substrates.
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