Low leakage current—stacked MgO∕Bi1.5Zn1.0Nb1.5O7 gate insulator— for low voltage ZnO thin film transistors
作者： Mi-Hwa Lim , KyongTae Kang , Ho-Gi Kim , Il-Doo Kim , YongWoo Choi
DOI: 10.1063/1.2387985
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摘要: The authors report on the role of MgO capping layers in notably reducing leakage currents and improving mobility ZnO thin film transistors (TFTs) utilizing compatible high-k Bi1.5Zn1.0Nb1.5O7 (BZN) gate insulators. All room temperature processed based TFTs with stacked MgO/BZN insulator exhibited a much enhanced field effect 5.4cm2∕Vs excellent saturation characteristics as compared to that (μFE=1.13cm2∕Vs) BZN insulator. This work demonstrates suitability insulators fabrication low voltage plastic substrates.
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