A novel antifuse structure based on amorphous bismuth zinc niobate thin films
作者： Gang Wang , Wei Li , Ping Li , Zuxiong Li , Xue Fan
DOI: 10.1088/1674-4926/33/8/084002
关键词:
摘要: A novel antifuse structure with amorphous bismuth zinc niobate (a-BZN) dielectrics was proposed. The characteristics of the a-BZN were investigated. Programming direction up to down chosen rupture antifuse. breakdown voltage obtained at a magnitude 6.56 V. large off-state resistance more than 1 GΩ for demonstrated. surface micrograph ruptured antifuses illustrated. programming time 0.46 ms and on-state properties average value 26.1 Ω exhibited. difference from that cubic pyrochlore (cp-BZN) gate oxide compared analyzed.
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