Temperature Dependent Electrical Characterization of Organic Semiconductor Diodes Deposited at 277g
作者： SA Moiz , MM Ahmed , Kh S Karimov , M Mehmood , None
DOI: 10.1109/INMIC.2006.358212
关键词: Materials science 、 Analytical chemistry 、 Conductivity 、 Substrate (electronics) 、 Variable-range hopping 、 Organic semiconductor 、 Diode 、 Doping 、 Thin film 、 Thermal conduction
摘要: In this study thin films of poly-N epoxipropylcarbazole (PEPC) doped by anthracene (An) were deposited over the surface nickel (Ni) substrate at gravity condition 277g (where g = 9.81 m2/sec). The current-voltage (I-V) characteristics fabricated devices (Ga/PEPC/Ni) determined different ambient temperature environment ranging from 30 degC to 60 degC. From conductivity versus response derived their I-V characteristics, it is observed that follow three dimension variable range hopping phenomena for charge transport mechanism. By applying model, conduction parameters organic semiconductor material are estimated. results these estimations, dependence electrical properties as a function evaluated and discussed
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