Mechanism for Embedded In-plane Self Assembled Nanowire Formation
作者： Nathaniel S. Wilson , Stephan Kraemer , Daniel J. Pennachio , Patrick Callahan , Mihir Pendharkar
DOI: 10.1103/PHYSREVMATERIALS.4.066003
关键词: Optoelectronics 、 Self assembled 、 Nanowire 、 Materials science 、 Kinetics 、 Scanning tunneling microscope 、 Molecular beam epitaxy 、 Surface energy 、 Electron 、 Transmission electron microscopy
摘要: We report a novel growth mechanism that produces in-plane [1-10] oriented ErSb nanowires formed during codeposition of Er0.3Ga0.7Sb via molecular beam epitaxy (MBE). Nanowires are characterized by in-situ scanning tunneling microscopy (STM), as well ex-situ transmission electron (TEM) and channeling contrast imaging (ECCI). show complexes macrosteps with step heights on the order 7 nm form nanowire growth. The shown to be part process directly responsible for observed stratified distribution nanowires. TEM indicates initial results in out-of-plane transitioning after critical film thickness. A surface energy model is put forward shows thickness due minimization GaSb{110} surfaces Kinetics transition discussed respect features STM, along material parameters needed achieve
arxiv.org
sci-hub.st 参考文章(42)
Julia I. Deitz, Santino D. Carnevale, Steven A. Ringel, David W. McComb, Tyler J. Grassman, Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization Journal of Visualized Experiments. ,(2015) , 10.3791/52745
H. J. Osten, E. Bugiel, P. Zaumseil, Self-organization during Si1−yCy alloy layer growth on Si(001) using homogeneous coevaporation Journal of Applied Physics. ,vol. 82, pp. 231- 235 ,(1997) , 10.1063/1.365862
E. T. Croke, F. Grosse, J. J. Vajo, M. F. Gyure, M. Floyd, David J. Smith, Substitutional C fraction and the influence of C on Si dimer diffusion in Si1−yCy alloys grown on (001) and (118) Si Applied Physics Letters. ,vol. 77, pp. 1310- 1312 ,(2000) , 10.1063/1.1287728
D. Leonard, M. Krishnamurthy, C. M. Reaves, S. P. Denbaars, P. M. Petroff, Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces Applied Physics Letters. ,vol. 63, pp. 3203- 3205 ,(1993) , 10.1063/1.110199
P. F. Miceli, C. J. Palmstro/m, X-ray scattering from rotational disorder in epitaxial films: An unconventional mosaic crystal Physical Review B. ,vol. 51, pp. 5506- 5509 ,(1995) , 10.1103/PHYSREVB.51.5506
Christoph Kadow, Andrew W Jackson, Arthur C Gossard, John E Bowers, Shuji Matsuura, Geoffrey A Blake, Self-assembled ErAs islands in GaAs for THz applications Physica E-low-dimensional Systems & Nanostructures. ,vol. 7, pp. 97- 100 ,(2000) , 10.1016/S1386-9477(99)00314-8
B. D. Schultz, C. J. Palmstrøm, Embedded assembly mechanism of stable metal nanocrystals on semiconductor surfaces Physical Review B. ,vol. 73, pp. 241407- ,(2006) , 10.1103/PHYSREVB.73.241407
E. M. Krivoy, H. P. Nair, A. M. Crook, S. Rahimi, S. J. Maddox, R. Salas, D. A. Ferrer, V. D. Dasika, D. Akinwande, S. R. Bank, Growth and characterization of LuAs films and nanostructures Applied Physics Letters. ,vol. 101, pp. 141910- ,(2012) , 10.1063/1.4757605
C. Kadow, J. A. Johnson, K. Kolstad, J. P. Ibbetson, A. C. Gossard, Growth and microstructure of self-assembled ErAs islands in GaAs Journal of Vacuum Science & Technology B. ,vol. 18, pp. 2197- 2203 ,(2000) , 10.1116/1.1306299
A. G. Petukhov, W. R. L. Lambrecht, B. Segall, Electronic structure and magnetism of the semimetals ErAs andErxSc1−xAs Physical Review B. ,vol. 50, pp. 7800- 7804 ,(1994) , 10.1103/PHYSREVB.50.7800