Growth and characterization of LuAs films and nanostructures

作者： E. M. Krivoy , H. P. Nair , A. M. Crook , S. Rahimi , S. J. Maddox

关键词: Optoelectronics 、 Transmission electron microscopy 、 Thin film 、 Nanolithography 、 Materials science 、 Heterojunction 、 Gallium arsenide 、 Epitaxy 、 Ohmic contact 、 Electrical resistivity and conductivity

摘要: We report the growth and characterization of nearly lattice-matched LuAs/GaAs heterostructures. Electrical conductivity, optical transmission, reflectivity measurements epitaxial LuAs films indicate that is semimetallic, with a room-temperature resistivity 90 μΩ cm. Cross-sectional transmission electron microscopy confirms nucleates as self-assembled nanoparticles, which can be overgrown high-quality GaAs. The material properties are very similar to those more established ErAs/GaAs system; however, we observe important differences in magnitude wavelength peak transparency, making superior for certain device applications, particularly thick epitaxially embedded Ohmic contacts transparent near-IR telecommunications window around 1.3 μm.

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Growth and characterization of LuAs films and nanostructures

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Growth and characterization of LuAs films and nanostructures

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