Growth and characterization of single crystal rocksalt LaAs using LuAs barrier layers
作者： E. M. Krivoy , S. Rahimi , H. P. Nair , R. Salas , S. J. Maddox
DOI: 10.1063/1.4766945
关键词: Electrical resistivity and conductivity 、 Single crystal 、 Reflectivity 、 Materials science 、 Mineralogy 、 Arsenide 、 Nucleation 、 Characterization (materials science) 、 Crystallite 、 Optoelectronics 、 Epitaxy
摘要: We demonstrate the growth of high‐quality, single crystal, rocksalt LaAs on III‐V substrates; employing thin well-behaved LuAs barriers layers at III-V/LaAs interfaces to suppress nucleation other phases, interfacial reactions between GaAs and LaAs, polycrystalline growth. This method enables crystal epitaxial with enhanced structural electrical properties. Temperature-dependent resistivity optical reflectivity measurements suggest that is semimetallic, consistent bandstructure calculations in literature. exhibits distinct properties, as compared previously reported rare-earth arsenide materials, a room-temperature ∼459 μΩ-cm an transmission window >50% ∼3-5 μm.
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