X‐ray scattering study of lattice relaxation in ErAs epitaxial layers on GaAs
作者： P. F. Miceli , C. J. Palmstro/m , K. W. Moyers
DOI: 10.1063/1.105138
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摘要: We present the results of a high‐resolution x‐ray scattering study lattice relaxation in [001]ErAs epitaxial layers grown on [001]GaAs. Three thickness regimes are found. ErAs is pseudomorphic GaAs for thicknesses below 70 A and between 300 observed concomitant with an increase in‐plane mosaic due to formation misfit dislocations. Above A, out‐of‐plane transverse from planes no longer specular further appears be related mosaic. The ratio elastic constants, C12/C11, measured 0.126. Thin‐film interference oscillations modeled, finding that 140 interface fluctuations ∼2.5 monolayers. ErAs/GaAs ideal system studies structure layers.
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