Strained isolation regions
作者： Mong-Song Liang , Hao-Ming Lien , Kuo-Tai Huang , Chih-tang Peng , Tze-Liang Lee
DOI:
关键词: Trench 、 Materials science 、 Substrate (printing) 、 Transistor 、 Dielectric 、 Chemical-mechanical planarization 、 Semiconductor structure 、 Stress (mechanics) 、 Ultimate tensile strength 、 Composite material 、 Electronic engineering
摘要: An isolation trench having localized stressors is provided. In accordance with embodiments of the present invention, a formed in substrate and partially filled dielectric material. an embodiment, layer planarization step performed to planarize surface substrate. The material then recessed below portion trench, may remain along sidewalls or be removed sidewalls. A stress film, either tensile compressive, over within portion. film also extend transistor other semiconductor structure.
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