Investigation of microstructural and electrical properties of composition dependent co-sputtered Hf1−x Ta x O2 thin films
作者： K C Das , N Tripathy , S P Ghosh , S K Mohanta , A Nakamura
关键词: Amorphous solid 、 RF power amplifier 、 Gate dielectric 、 Thin film 、 Analytical chemistry 、 Doping 、 Charge density 、 Materials science 、 Silicon 、 Tantalum
摘要: Tantalum doped HfO2 gate dielectric thin films were deposited on silicon substrates using RF reactive co-sputtering by varying power of Ta target from 15 W to 90 W. The morphological, compositional and electrical properties Hf1−x x O2 systematically investigated. content was found be increased up 21% for a evolution monoclinic phase seen XRD study upto 60 afterwards, the amorphous like behaviour is appeared. featureless smooth surface with decrease in granular morphology has been observed FESEM micrographs at higher powers Ta. flatband voltage shifted towards negative capacitance–voltage plot, which attributed enhancement positive oxide charge density rise power. interface minimum value 7.85 × 1011 eV−1 cm−2 film 75 shown lower leakage current. high on/off ratio current during set process based memristors suitable bipolar resistive switching memory device applications.
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Hao Wang, Jun Zhang, Yun Ye, Yi Wang, Baoyuan Wang, Yingchun Jin, Cong Ye, Composition dependence of band alignment and dielectric constant for Hf1−xTixO2 thin films on Si (100) Journal of Applied Physics. ,vol. 107, pp. 104103- ,(2010) , 10.1063/1.3380588
M.-H. Cho, Y. S. Roh, C. N. Whang, K. Jeong, H. J. Choi, S. W. Nam, D.-H. Ko, J. H. Lee, N. I. Lee, K. Fujihara, Dielectric characteristics of Al2O3–HfO2 nanolaminates on Si(100) Applied Physics Letters. ,vol. 81, pp. 1071- 1073 ,(2002) , 10.1063/1.1499223
Yoshitaka Nagasato, Yoshitaka Iwazaki, Masahiko Hasumi, Tomo Ueno, Koichi Kuroiwa, Thermal Stability of HfO2Films Fabricated by Metal Organic Chemical Vapor Deposition Japanese Journal of Applied Physics. ,vol. 47, pp. 31- 34 ,(2008) , 10.1143/JJAP.47.31
M. A. Taylor, R. E. Alonso, L. A. Errico, A. López-García, P. de la Presa, A. Svane, N. E. Christensen, Coexistence of different charge states in Ta-doped monoclinic HfO2: Theoretical and experimental approaches Physical Review B. ,vol. 82, pp. 165203- ,(2010) , 10.1103/PHYSREVB.82.165203
Andrei Ionut Mardare, Alfred Ludwig, Alan Savan, Andreas Dirk Wieck, Achim Walter Hassel, Combinatorial investigation of Hf–Ta thin films and their anodic oxides Electrochimica Acta. ,vol. 55, pp. 7884- 7891 ,(2010) , 10.1016/J.ELECTACTA.2010.03.066
M. A. Quevedo-Lopez, S. A. Krishnan, P. D. Kirsch, G. Pant, B. E. Gnade, R. M. Wallace, Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability Applied Physics Letters. ,vol. 87, pp. 262902- ,(2005) , 10.1063/1.2150586
Choong-Ki Lee, Eunae Cho, Hyo-Sug Lee, Cheol Seong Hwang, Seungwu Han, First-principles study on doping and phase stability of HfO 2 Physical Review B. ,vol. 78, pp. 012102- ,(2008) , 10.1103/PHYSREVB.78.012102
K Xue, H P Ho, J B Xu, Local study of thickness-dependent electronic properties of ultrathin silicon oxide near SiO2/Si interface Journal of Physics D. ,vol. 40, pp. 2886- 2893 ,(2007) , 10.1088/0022-3727/40/9/033
G Lucovsky, J.L Whitten, Y Zhang, A molecular orbital model for the electronic structure of transition metal atoms in silicate and aluminate alloys Solid-state Electronics. ,vol. 46, pp. 1687- 1697 ,(2002) , 10.1016/S0038-1101(02)00160-0
Mei Ji, Lei Wang, Jun Du, Preparation and characterization of Gd2O3-doped HfO2 high- k gate dielectric thin films by RF sputtering Journal of Physics: Conference Series. ,vol. 152, pp. 012005- ,(2009) , 10.1088/1742-6596/152/1/012005