Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability
作者： M. A. Quevedo-Lopez , S. A. Krishnan , P. D. Kirsch , G. Pant , B. E. Gnade
DOI: 10.1063/1.2150586
关键词:
摘要: A hafnium silicon oxynitride gate dielectric with a universal channel mobility of ∼90% at 1MV∕cm, equivalent oxide thickness approximately 1nm, and leakage current 200× less than SiO2 is reported. X-ray photoelectron spectroscopy results suggest that the small peak loss observed in scaled HfSiON may be attributed to increased Si–N bonding near interface. In accordance these results, Si–N:Hf–N bond ratio decreases increasing physical thickness. Threshold voltage instability 1nm 10mV after 1000s stress 22MVcm. ΔVTH monotonically increases This associated greater crystallization thicker films.
harvard.edu
scitation.org
aip.org
sci-hub.se 参考文章(7)
R. Chau, S. Datta, M. Doczy, B. Doyle, J. Kavalieros, M. Metz, High-/spl kappa//metal-gate stack and its MOSFET characteristics IEEE Electron Device Letters. ,vol. 25, pp. 408- 410 ,(2004) , 10.1109/LED.2004.828570
Hion Suck Baik, Miyoung Kim, Gyeong-Su Park, Se Ahn Song, Maria Varela, A. Franceschetti, S. T. Pantelides, S. J. Pennycook, Interface structure and non-stoichiometry in HfO2 dielectrics Applied Physics Letters. ,vol. 85, pp. 672- 674 ,(2004) , 10.1063/1.1772855
Gerald Lucovsky, Hanyang Yang, Yider Wu, Hiroake Niimi, Plasma processed ultra-thin SiO2 interfaces for advanced silicon NMOS and PMOS devices: applications to Si-oxide/Si oxynitride, Si-oxide/Si nitride and Si-oxide/transition metal oxide stacked gate dielectrics Thin Solid Films. ,vol. 374, pp. 217- 227 ,(2000) , 10.1016/S0040-6090(00)01153-6
Massimo V. Fischetti, Deborah A. Neumayer, Eduard A. Cartier, Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering Journal of Applied Physics. ,vol. 90, pp. 4587- 4608 ,(2001) , 10.1063/1.1405826
Jeff J Peterson, Chadwin D Young, Joel Barnett, Sundar Gopalan, Jim Gutt, Choong-Ho Lee, Hong-Jyh Li, Tuo-Hung Hou, Yudong Kim, Chan Lim, Nirmal Chaudhary, Naim Moumen, Byoung-Hun Lee, Gennadi Bersuker, George A Brown, Peter M Zeitzoff, Mark I Gardner, Robert W Murto, Howard R Huff, None, Subnanometer Scaling of HfO2/Metal Electrode Gate Stacks Electrochemical and Solid State Letters. ,vol. 7, ,(2004) , 10.1149/1.1760712
E.P Gusev, C D'Emic, S Zafar, A Kumar, Charge trapping and detrapping in HfO 2 high- k gate stacks Microelectronic Engineering. ,vol. 72, pp. 273- 277 ,(2004) , 10.1016/J.MEE.2004.01.003
S. Datta, G. Dewey, M. Doczy, B.S. Doyle, B. Jin, J. Kavalieros, R. Kotlyar, M. Metz, N. Zelick, R. Chau, High mobility Si/SiGe strained channel MOS transistors with HfO/sub 2//TiN gate stack international electron devices meeting. ,(2003) , 10.1109/IEDM.2003.1269365