Charge trapping and detrapping in HfO 2 high- k gate stacks
作者： E.P Gusev , C D'Emic , S Zafar , A Kumar
DOI: 10.1016/J.MEE.2004.01.003
关键词:
摘要: We report on charge transfer (trapping and detrapping) dynamics in ultrathin poly-Si gated NFET devices with HfO2 high-k gate dielectrics deposited by atomic layer deposition (ALD). The focus of this work is twofold: (i) to investigate the role processing trapping ALD stacks (ii) study trapped (in)stability (i.e., as a function temperature, bias light illumination. kinetics both detrapping suggest existence more than one kind existing traps their energy levels located deep forbidden gap insulator.
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