Double dense ferroelectric capacitor cell memory
作者： Donald McAlpine Kenney
DOI:
关键词: Materials science 、 Binary information 、 Semiconductor memory 、 Ferroelectric capacitor 、 Capacitive sensing 、 Reading (computer) 、 Electrical engineering 、 Cell memory 、 Polarization (electrochemistry)
摘要: A semiconductor memory is provided wherein two bits of binary information are stored simultaneously in a ferroelectric capacitor by utilizing the positive and negative polarization states for storing first capacitive characteristic to store second without altering capacitor. When reading from capacitor, read out transferred buffer cell, then re-written, as desired, returned cell
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