Ferroelectric memory device and method of driving the same
作者： Kazumasa Hasegawa
DOI:
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摘要: A ferroelectric memory device includes a cell array in which plurality of cells having at least one capacitor are arranged. Three or more values data (Pr( 0 ), P 1 ( and −Pr( 2 for example) can be selectively stored the by applying voltages three different setting polarization states capacitor.
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