Analog ferroelectric memory with improved temperature range
作者： Joseph T. Evans , Calvin B. Ward
DOI:
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摘要: A ferroelectric memory and a method for operating are disclosed. The includes cell having capacitor characterized by maximum remanent charge, Q max . write circuit receives data value more than two states storage in the capacitor. measures capacitor, determines charge that is fraction of measured to be stored being determined value. causes equal times read measuring determining from
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