作者: Jy-Der D. Tai
DOI:
关键词: Computer data storage 、 Voltage drop 、 Voltage 、 Electrical engineering 、 Sense amplifier 、 Engineering 、 Line (electrical engineering) 、 Ferroelectric RAM 、 Ferroelectric capacitor 、 Capacitor
摘要: A method for reading and restoring data in a FERAM (10) is provided. The comprises FET (11) ferroelectric capacitor (12). has gate connected to word line (14), source coupled plate (15) via the (12), drain bit (16). process begins by placing predetermined amount of charge (17), which turn charges (12) after switched on, resulting voltage drop determined stored at sense amplifier (18) adjusts (16) accordingly read from (10). Applying switching off restore