Method of multi-level cell FeRAM
作者： Hsiang-Lan Lung , Hsueh Yi Lee , Sheng Chih Lai , Ching Wei Tsai
DOI:
关键词:
摘要: Disclosed are use methods, integrated circuits, and manufacturing methods for ferroelectric memory. A data value from multiple values is received, example by a state machine controlling the The different correspond to particular durations. corresponding selected duration stored in memory cell applying voltage duration.
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