Demonstration of silicon carbide (SiC) -based motor drive
作者： H.-R. Chang , E. Hanna , A.V. Radun
DOI: 10.1109/IECON.2003.1280204
关键词: Materials science 、 Electrical engineering 、 Optoelectronics 、 JFET 、 Motor drive 、 Insulated-gate bipolar transistor 、 Power rating 、 Silicon carbide 、 Diode 、 Schottky diode 、 Inverter
摘要: This paper describes a SiC-based motor drive technology used to achieve compact power conversion. The static and dynamic characterization of 600 V SiC MOS-enhanced JFETs Schottky free-wheeling diodes (FWDs) designed fabricated at Rockwell Scientific, are performed. loss related voltage current stress the JFET FWD measured compared that state-of-the-art silicon IGBTs PlN FWDs with ratings equal ratings. For same rating (25 A, V), area die making up inverter modules about 60% commercial 25 A IGBT die. total module is reduced by 52.5% Si module. successfully 10 hp motor.
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