Ion etching for pattern delineation

作者： C. M. Melliar‐Smith

关键词: Integrated circuit 、 Analytical chemistry 、 Dry etching 、 Etching (microfabrication) 、 Reactive-ion etching 、 Silicon 、 Ion beam 、 Ion milling machine 、 Sputtering 、 Optoelectronics 、 Materials science

摘要: This paper is a review of the application ion etching (both beam milling and rf sputter etching) to pattern delineation in integrated circuit fabrication. Typical equipment use conditions are described along with advantages disadvantages each process. Two case histories where has been successfully used delineate metallization levels silicon circuits by magnetic bubble devices milling.