Optical isotropization of anisotropic wurtzite Al‐rich AlGaN via asymmetric modulation with ultrathin (GaN)m/(AlN)n superlattices
作者： Wei Lin , Wei Jiang , Na Gao , Duanjun Cai , Shuping Li
关键词: Quantum well 、 Wurtzite crystal structure 、 Modulation 、 Optoelectronics 、 Semiconductor 、 Condensed matter physics 、 Nanostructured materials 、 Anisotropy 、 Materials science 、 Superlattice
摘要: 973 program [2012CB619301, 2011CB925600]; "863" [2011AA03A111]; National Natural Science Foundation of China [61106008, 11204254, 61204101, 90921002]; FRFCU [2012121011, 2011121042]; Foundations Fujian Province [2010J01343, 2012J01024]; fundamental research funds for the central universities [2011121042]
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M. Albrecht, L. Lymperakis, J. Neugebauer, J. E. Northrup, L. Kirste, M. Leroux, I. Grzegory, S. Porowski, H. P. Strunk, Chemically ordered AlGaN alloys: Spontaneous formation of natural quantum dots Physical Review B. ,vol. 71, pp. 035314- ,(2005) , 10.1103/PHYSREVB.71.035314
P. E. Blöchl, Projector augmented-wave method Physical Review B. ,vol. 50, pp. 17953- 17979 ,(1994) , 10.1103/PHYSREVB.50.17953
Yik-Khoon Ee, Xiao-Hang Li, Jeff Biser, Wanjun Cao, Helen M. Chan, Richard P. Vinci, Nelson Tansu, Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire Journal of Crystal Growth. ,vol. 312, pp. 1311- 1315 ,(2010) , 10.1016/J.JCRYSGRO.2009.10.029
Jing Zhang, Hongping Zhao, Nelson Tansu, Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers Applied Physics Letters. ,vol. 97, pp. 111105- ,(2010) , 10.1063/1.3488825
S. Shokhovets, O. Ambacher, B. K. Meyer, G. Gobsch, Anisotropy of the momentum matrix element, dichroism, and conduction-band dispersion relation of wurtzite semiconductors Physical Review B. ,vol. 78, pp. 035207- ,(2008) , 10.1103/PHYSREVB.78.035207
Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto, An aluminium nitride light-emitting diode with a wavelength of 210 nanometres Nature. ,vol. 441, pp. 325- 328 ,(2006) , 10.1038/NATURE04760
Wei Lin, Dierre Benjamin, Shuping Li, Takashi Sekiguchi, Shun Ito, Junyong Kang, Band Engineering in Strained GaN/ultrathin InN/GaN Quantum Wells Crystal Growth & Design. ,vol. 9, pp. 1698- 1701 ,(2009) , 10.1021/CG8003867
Peng Zhao, Lu Han, Matthew R. McGoogan, Hongping Zhao, Analysis of TM mode light extraction efficiency enhancement for deep ultraviolet AlGaN quantum wells light-emitting diodes with III-nitride micro-domes Optical Materials Express. ,vol. 2, pp. 1397- 1406 ,(2012) , 10.1364/OME.2.001397
Yoshitaka Taniyasu, Makoto Kasu, Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices Applied Physics Letters. ,vol. 99, pp. 251112- ,(2011) , 10.1063/1.3671668
I. Vurgaftman, J. R. Meyer, L. R. Ram-Mohan, Band parameters for III–V compound semiconductors and their alloys Journal of Applied Physics. ,vol. 89, pp. 5815- 5875 ,(2001) , 10.1063/1.1368156