Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices
作者： Yoshitaka Taniyasu , Makoto Kasu
DOI: 10.1063/1.3671668
关键词: Ultraviolet light 、 Wavelength 、 Polarization (waves) 、 Optoelectronics 、 Wide-bandgap semiconductor 、 Light-emitting diode 、 Electric field 、 Diode 、 Superlattice 、 Materials science
摘要: … the GaN well thickness decreases from 2.5 to 0.9 monolayers, … hole band of GaN, the emission is polarized for electric field … For our SLs, the compressive strain was induced in the GaN …
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Yoshitaka Taniyasu, Makoto Kasu, Naoki Kobayashi, Intentional control of n-type conduction for Si-doped AlN and AlXGa1−XN (0.42⩽x<1) Applied Physics Letters. ,vol. 81, pp. 1255- 1257 ,(2002) , 10.1063/1.1499738
Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto, Electrical conduction properties of n-type Si-doped AlN with high electron mobility (>100cm2V−1s−1) Applied Physics Letters. ,vol. 85, pp. 4672- 4674 ,(2004) , 10.1063/1.1824181
G.i M. Prinz, A. Ladenburger, M. Schirra, M. Feneberg, K. Thonke, R. Sauer, Y. Taniyasu, M. Kasu, T. Makimoto, Cathodoluminescence, photoluminescence, and reflectance of an aluminum nitride layer grown on silicon carbide substrate Journal of Applied Physics. ,vol. 101, pp. 023511- ,(2007) , 10.1063/1.2423141
Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto, Threading dislocations in heteroepitaxial AlN layer grown by MOVPE on SiC (0 0 0 1) substrate Journal of Crystal Growth. ,vol. 298, pp. 310- 315 ,(2007) , 10.1016/J.JCRYSGRO.2006.10.032
Yoshitaka Taniyasu, Makoto Kasu, Surface 210 nm light emission from an AlN p–n junction light-emitting diode enhanced by A-plane growth orientation Applied Physics Letters. ,vol. 96, pp. 221110- ,(2010) , 10.1063/1.3446834
G. Martin, A. Botchkarev, A. Rockett, H. Morkoç, Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy Applied Physics Letters. ,vol. 68, pp. 2541- 2543 ,(1996) , 10.1063/1.116177
Daisuke Morita, Masashi Yamamoto, Kazuyuki Akaishi, Kousuke Matoba, Katsuhiro Yasutomo, Yoshio Kasai, Masahiko Sano, Shin-ichi Nagahama, Takashi Mukai, Watt-Class High-Output-Power 365 nm Ultraviolet Light-Emitting Diodes Japanese Journal of Applied Physics. ,vol. 43, pp. 5945- 5950 ,(2004) , 10.1143/JJAP.43.5945
Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto, An aluminium nitride light-emitting diode with a wavelength of 210 nanometres Nature. ,vol. 441, pp. 325- 328 ,(2006) , 10.1038/NATURE04760
Bernard Gil, Fayçal Hamdani, Hadis Morkoç, Oscillator strengths for optical band-to-band processes in GaN epilayers. Physical Review B. ,vol. 54, pp. 7678- 7681 ,(1996) , 10.1103/PHYSREVB.54.7678
Yoshitaka Taniyasu, Makoto Kasu, Origin of exciton emissions from an AlN p-n junction light-emitting diode Applied Physics Letters. ,vol. 98, pp. 131910- ,(2011) , 10.1063/1.3574025