AFM Characterization of Copper Dendritic Growths in Integrated Electronic Microcircuits
作者： C. Gabrielli , C. Mace , E. Ostermann , A. Pailleret
DOI: 10.1149/1.2801857
关键词: Copper 、 Characterization (materials science) 、 Copper interconnect 、 Polishing 、 Microelectrode 、 Dendrite 、 Microelectronics 、 Electrochemistry 、 Materials science 、 Nanotechnology
摘要: Copper dendrites were produced electrochemically between two biased copper microelectrodes of various patterns localized in integrated microcircuits (ICs). Preliminary atomic force microscopy (AFM) investigations confirmed first that ICs indeed provide favorable sites for the bidimensional growth dendrites. They also allowed identifying important geometrical and electrochemical parameters influence untimely observed during postchemical mechanical polishing cleaning step Damascene process, microelectronics industry. Among these parameters, distance selected probably plays a significant role formation dendrite based short circuits.
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