Fabrication of PIN photo-diode from Si0.2Ge0.8/Si strained MQWs
作者： Taek Sung Kim , Sang-Sik Choi , Tae Soo Jeong , Sukil Kang , Chel-Jong Choi
关键词: Active layer 、 Diffraction 、 Optoelectronics 、 Fabrication 、 Materials science 、 Dry etching 、 Photodiode 、 Chemical vapor deposition 、 Ferroelectricity 、 Ultra-high vacuum
摘要: … by pure Si. The heterostructures with SiGe and Si layers grown on Si substrates allow the … in the 0.8 μm to 1.6 μm spectral range and a high-speed operation.[1-3] Although pin pho…
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