Characterization of reduced pressure chemical vapor deposited Si0.8Ge0.2/Si multi-layers

摘要: Abstract We have investigated the Si 0.8 Ge 0.2 /Si multi-layer grown directly onto (001) substrates using reduced pressure chemical vapor deposition. The thicknesses of were determined transmission electron microscopy. From results energy-dispersive X-ray spectroscopy and diffraction analyses on multi-layer, composition in 1− x layers was as ∼20% value residual strain e layer is calculated to be 0.012. Three peaks are observed Raman spectrum, which located at approximately 514, 404, 303 cm −1 , corresponding vibration Si–Si, Si–Ge, Ge–Ge phonons, respectively. photoluminescence spectrum originates from radiative recombinations both substrate multi-layer. For transition related quantum well region photocurrent preliminarily assigned e–hh e–lh fundamental excitonic transitions.