Atomic ordering in molecular beam epitaxial InAsySb1−ynatural strained layer superlattices and homogeneous layers
作者： Tae‐Yeon Seong , G. R. Booker , A. G. Norman , I. T. Ferguson
DOI: 10.1063/1.111208
关键词: Superlattice 、 Layer (electronics) 、 Crystallography 、 Materials science 、 Lattice constant 、 Molecular beam 、 Surface reconstruction 、 Molecular beam epitaxy 、 Epitaxy 、 Condensed matter physics 、 Transmission electron microscopy
摘要: Transmission electron microscope studies were made of CuPt‐type ordering in molecular beam epitaxial InAsySb1−y natural strained layer superlattices and homogeneous layers grown at temperatures the range 295–470 °C. Ordering occurs with a maximum growth temperature 370–400 °C, individual (111) ordered domains up to 10 nm size are present, there is modulation periodicity 3 d110 within layers, where (110) lattice spacing. The latter correlates [2×3] atomic surface reconstruction present during growth.
scitation.org
harvard.edu
elsevier.com
aip.org
sci-hub.se 参考文章(11)
I. J. Murgatroyd, A. G. Norman, G. R. Booker, Observation of {111} ordering and [110] modulation in molecular beam epitaxial GaAs1−ySby layers: Possible relationship to surface reconstruction occurring during layer growth Journal of Applied Physics. ,vol. 67, pp. 2310- 2319 ,(1990) , 10.1063/1.345526
Yeong‐Eon Ihm, N. Otsuka, J. Klem, H. Morkoç, Ordering in GaAs1−xSbx grown by molecular beam epitaxy Applied Physics Letters. ,vol. 51, pp. 2013- 2015 ,(1987) , 10.1063/1.98277
S. R. Kurtz, L. R. Dawson, R. M. Biefeld, D. M. Follstaedt, B. L. Doyle, Ordering-induced band-gap reduction inInAs1−xSbx(x≊0.4) alloys and superlattices Physical Review B. ,vol. 46, pp. 1909- 1912 ,(1992) , 10.1103/PHYSREVB.46.1909
A. Gomyo, T. Suzuki, K. Kobayashi, S. Kawata, I. Hino, T. Yuasa, Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy Applied Physics Letters. ,vol. 50, pp. 673- 675 ,(1987) , 10.1063/1.98062
P. Bellon, J. P. Chevalier, E. Augarde, J. P. André, G. P. Martin, Substrate‐driven ordering microstructure in GaxIn1−xP alloys Journal of Applied Physics. ,vol. 66, pp. 2388- 2394 ,(1989) , 10.1063/1.344245
H. R. Jen, K. Y. Ma, G. B. Stringfellow, Long-range order in InAsSb Applied Physics Letters. ,vol. 54, pp. 1154- 1156 ,(1989) , 10.1063/1.100746
I. T. Ferguson, A. G. Norman, B. A. Joyce, T‐Y. Seong, G. R. Booker, R. H. Thomas, C. C. Phillips, R. A. Stradling, Molecular beam epitaxial growth of InAsSb strained layer superlattices. Can nature do it better? Applied Physics Letters. ,vol. 59, pp. 3324- 3326 ,(1991) , 10.1063/1.105720
Su‐Huai Wei, Alex Zunger, Proposal for III‐V ordered alloys with infrared band gaps Applied Physics Letters. ,vol. 58, pp. 2684- 2686 ,(1991) , 10.1063/1.104807
Tae‐Yeon Seong, A. G. Norman, I. T. Ferguson, G. R. Booker, Transmission electron microscopy and transmission electron diffraction structural studies of heteroepitaxial InAsySb1−y molecular‐beam epitaxial layers Journal of Applied Physics. ,vol. 73, pp. 8227- 8236 ,(1993) , 10.1063/1.353440
D. J. Arent, M. Bode, K. A. Bertness, Sarah R. Kurtz, J. M. Olson, Band‐gap narrowing in ordered Ga0.47In0.53As Applied Physics Letters. ,vol. 62, pp. 1806- 1808 ,(1993) , 10.1063/1.109640