Coexistence of the Cu3Au type ordered structure and the fine modulation in CdxZn1−xTe epilayers grown on GaAs substrates
作者： H. S. Lee , J. Y. Lee , T. W. Kim , D. C. Choo , H. L. Park
DOI: 10.1063/1.1517177
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摘要: Selected-area electron diffraction pattern (SADP) and transmission microscopy (TEM) measurements were carried out to investigate the spontaneously ordered structure in CdxZn1−xTe epitaxial layers grown on (001) GaAs substrates. The SADP showed superstructure reflections with symmetrical intensity, high-resolution TEM (HRTEM) image doublet periodicity contrast of {100} {110} lattice planes. results HRTEM that Cu3Au type structures formed layers. dark-field size domains a rectangular-like shape was approximately 15∼30 nm thick, widths ranging from 30 200 nm. Fine modulations also observed. These provide important information microstructural properties for enhancing efficiencies CdxZn1−xTe-based optoelectronic devices operating at blue-green region spectrum.
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