Coexistence of a phase separation and an ordered structure in CdxZn1−xTe epilayers grown on GaAs(001) substrates
作者： H. S. Lee , H. S. Sohn , J. Y. Lee , K. H. Lee , Y. H. Kim
DOI: 10.1063/1.2195020
关键词: Molecular beam epitaxial growth 、 Molecular beam epitaxy 、 Materials science 、 Tellurium compounds 、 Crystal growth 、 Transmission electron microscopy 、 Crystallography 、 Electron diffraction pattern 、 Ternary semiconductors 、 Electron diffraction
摘要: The coexistence of a phase separation and an ordered structure in CdxZn1−xTe epilayers grown on GaAs(001) substrates by using molecular beam epitaxy was investigated. results selected-area electron diffraction pattern transmission microscopy measurements showed that structures, such as CuPt-type CuAu-I-type together with spinodal-like were formed the CdxZn1−xTe∕GaAs heteroepitaxial layers. structures is discussed.
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