High‐speed InP/InGaAsP metal‐semiconductor field‐effect transistors grown by chloride vapor phase epitaxy
作者： A. Antreasyan , P. A. Garbinski , V. D. Mattera , M. D. Feuer , J. Filipe
DOI: 10.1063/1.101372
关键词: Power gain 、 Epitaxy 、 Schottky diode 、 MESFET 、 Materials science 、 Optoelectronics 、 Cutoff frequency 、 Transconductance 、 Field-effect transistor 、 Transistor
摘要: We report the fabrication of enhancement mode InGaAsP/InP metal‐semiconductor field‐effect transistors having gate lengths 2 μm. The epitaxial layers for this structure have been grown by chloride vapor phase epitaxy. devices show extrinsic transconductances as high 220 mS/mm, a short‐circuit current gain cutoff frequency fT=5.2 GHz, and maximum available power fmax=9.5 GHz. A novel technology has utilized where lower band‐gap quaternary InGaAsP layer about 350 thickness is on top InP channel layer.
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