Programmable fuse/non-volatile memory structures in beol regions using externally heated phase change material
作者： Dennis M. Newns , Chandrasekharan Kothandaraman , Bruce G. Elmegreen , Lia Krusin-Elbaum , Sampath Purushothaman
DOI:
关键词: Engineering 、 Semiconductor device 、 Fuse (electrical) 、 Electrical contacts 、 Non-volatile memory 、 Optoelectronics 、 Electronic engineering 、 Dielectric 、 Heating element 、 Current (fluid) 、 Phase-change material
摘要: A programmable phase change material (PCM) structure includes a heater element formed at BEOL level of semiconductor device, the including low-K dielectric therein; first via in electrical contact with end and second element, thereby defining programming current path which passes through via, via; PCM disposed above configured to be programmed between lower resistance crystalline state higher amorphous use currents element; third sense via.
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