Programmable via devices in back end of line level

作者: Dennis M. Newns , Lia Krusin-Elbaum , Kuan-Neng Chen , Sampath Purushothaman

DOI:

关键词: Via deviceFabricationIsolation layerOptoelectronicsLayer (electronics)Electrical engineeringBack end of lineMaterials scienceDielectric layerPhase-change materialElectrical conductor

摘要: Programmable via devices and methods for the fabrication thereof are provided. In one aspect, a programmable device is The comprises first dielectric layer; at least isolation layer over heater within capping side of opposite extending through portion in contact with heater, comprising phase change material; conductive cap via; second via, each layer, heater; third cap.

参考文章(13)
Antonietta Oliva, Vei-Han Chan, Narbeh Derhacobian, II Louis Charles Kordus, Multi-Terminal Phase Change Devices ,(2012)
Se-Ho Lee, Kyung-Chang Ryoo, Su-Youn Lee, Young-Nam Hwang, PRAMS having phase-change layer pattern with electrode contact area and methods of forming the same ,(2005)
Guy Wicker, Tyler Lowrey, Ward Parkinson, Programmable matrix array with chalcogenide material ,(2005)
Hsiang-Lan Lung, Rich Liu, Shih-Hung Chen, Yi-Chou Chen, Phase change memory cell and manufacturing method ,(2006)
K.N. Chen, L. Krusin-Elbaum, C. Cabral, C. Lavoie, J. Sun, S. Rossnagel, Thermal stress evaluation of a PCRAM material Ge2Sb2Te5 2006 21st IEEE Non-Volatile Semiconductor Memory Workshop. pp. 97- 98 ,(2006) , 10.1109/.2006.1629511
Antonietta Oliva, Vei-Han Chan, Louis Charles Kordus, Thomas E. Stewart, Narbeh Derhacobian, Methods for fabricating multi-terminal phase change devices ,(2005)