Immunity of phase change material to disturb in the amorphous phase
作者： Gianpaolo Spadini , Ilya V. Karpov , Ward D. Parkinson , Tyler A. Lowrey , Semyon D. Savransky
DOI:
关键词: Electrical engineering 、 Threshold voltage 、 Materials science 、 Current (fluid) 、 State (computer science) 、 Voltage 、 Crystal 、 Phase-change material 、 Phase-change memory 、 Optoelectronics 、 Reset (computing)
摘要: Disturb from the reset to set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming in a change memory. In some embodiments, this can achieved using current or voltage program exceeds threshold memory element, but does not exceed safe which would cause disturb.
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