Anisotropy in monocrystalline CVD diamond growth I. A sphere growth experiment
作者： W.J.P. van Enckevort , G. Janssen , L.J. Giling
DOI: 10.1016/0022-0248(91)90035-4
关键词: Lattice constant 、 Condensed matter physics 、 Crystal growth 、 Chemical vapor deposition 、 Diamond 、 Crystallite 、 Epitaxy 、 Optics 、 Materials science 、 Material properties of diamond 、 Monocrystalline silicon
摘要: Abstract The orientation dependence of diamond growth in a hot filament assisted CVD system has been investigated by epitaxial deposition film on hemispherical, monocrystalline substrate. Two flat faces are encountered, namely {111} and {100}. both is governed steps parallel to . In addition, the {100} covered crystallites random orientation. Apart from some rough regions near {111}, remaining surface sphere relatively smooth. A network cracks close indicates difference lattice parameter between grown layer substrate for this Cathodoluminescence topography hemisphere shows that intensity green blue luminescence thus formation defects varies strongly with direction crystal growth.
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