High quality homoepitaxial growth of diamond films
作者： Jean-Pierre Vitton , Jean-Jacques Garenne , Sylvie Truchet
DOI: 10.1016/0925-9635(93)90209-K
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摘要: Abstract High quality diamond films have been grown by hot-filament-assisted and microwave-plasma-assisted chemical vapour deposition on (100) natural crystal for a range of temperatures from about 700 to 1000°C. Pure pyramidal growth structures crystallites were obtained at high while smooth transparent between 750 850°C. Both types film give low channelling yield with Rutherford backscattering spectroscopy, comparable single-crystal no mismatch feature, graphite peak Raman spectroscopy.
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